Geometric construction of carbon nanotube junctions article pdf available in modelling and simulation in materials science and engineering 126. Field effect transistors fets that are stretchable up to 50% without appreciable degradation in performance are demonstrated. When the first carbon nanotube field effect transistors cntfets were reported in 1998,10,11 it was not even clear how they functioned, but subsequent progress has been rapid. Simulations of carbon nanotube field effect transistors. Using a scheme based on recognition between molecular building blocks, we report the realization of a selfassembled carbon nanotube field effect transistor operating at room temperature. Carbon nanotube fieldeffect transistors with integrated ohmic.
Polymerselected carbon nanotubes for lightemitting fieldeffect. Now we know it is the schottky barrier sb at contacts that play a central role in the switching characteristic when sb is large enough to block current, switching occurs by modulation of contact resistance for small sb, conventional channel limited fet depends on channel conductance. A common feature of the singlewalled carbonnanotube. Huq, bashirul polash, oscar machado and nora espinoza march 1st 2010. Hysteresisfree carbon nanotube fieldeffect transistors. Study of carbon nanotube field effect transistors for nems, carbon nanotubes, jose mauricio marulanda, intechopen, doi. Hooges constant for carbon nanotube field effect transistors. Index termscarbon nanotube cnt, carbon nanotube field effect transistor cnfet, contact resistance, direct sourcetodrain tunneling. As hysteresis is caused by traps surrounding the cnts, previous works have shown that clean interfaces that are free of traps are important to minimize hysteresis.
High performance ntype carbon nanotube field effect transistors with chemically doped contacts ali javey1, ryan tu1, damon farmer2, jing guo3, roy gordon2, and hongjie dai1 1 department of chemistry and laboratory for advanced materials, stanford university, stanford, ca 94305, usa. However, the advancement of carbon nanotube based electronics requires assembly strategies that allow their precise localization and interconnection. Physical and electrical characteristics of carbon nanotube. Recent advances in such areas reveal trends that are beating an. At the open channel state negative gate voltage, humidity pulse resulted in the decrease of the sourcedrain current, and, vice versa, the increase in the sourcedrain current was observed at the positive gate. Localgated singlewalled carbon nanotube field effect transistors. The fets are based on buckled thin films of polyfluorenewrapped semiconducting singlewalled carbon nanotubes cnts as the channel, a flexible ion gel as the dielectric, and buckled metal films as electrodes. A study of carbon nanotubes and their applications in transistors. A carbon nanotube field effect transistor refers to a fet that utilizes a single cnt or an array of cnts as the channel material instead of bulk silicon in the traditional mosfet structure. Carbon nanotube field effect transistors with improved characteristics r. This presents an important advantage over devices with a metal sourcedrain, or devices commonly referred to as schottky barrier fets. While carbon nanotube cnt field effect transistors cnfets promise highperformance and energyefficient digital systems, large hysteresis degrades these potential cnfet benefits. Device and circuitlevel performance of carbon nanotube field effect transistor with benchmarking against a nanomosfet.
Temperature effects on mosfetlike carbon nanotube field effect transistors mostafa fedawy, wael fikry, adel al henawy, hazem hassan. A compact virtualsource model for carbon nanotube fieldeffect. Schottky barriers in carbon nanotube metal contacts. Mechanism of gas sensing in carbon nanotube field effect. Because the gates capacitance is smaller for a carbonnanotube transistor, even if the silicon devices were scaled down to the size of the cnt device, the latter would still switch faster, he says. Both single channel field effect transistors and devices with network conducting channels have been fabricated and their electronic characteristics examined.
The first carbon nanotube field effect transistors were reported in 1998. Dnatemplated carbon nanotube fieldeffect transistor. Mtu have developed a method for producing a tunneling field effect transistor tfet that overcomes a key. Fuhrer department of physics and center for superconductivity research, university of. Compact model for carbon nanotube fieldeffect transistors. In particular we will study tunneling phenomena appearing in these devices and. The effect on metallic and semiconducting cnt exposure in the channel of the transistor devices was characterization of contact mechanisms and effect of electron irradiation in carbon nanotube field effect transistors david perello, m.
Nanotubebased tunneling field effect transistor offers. Carbonbased fieldeffect transistors for nanoelectronics. Highly stretchable carbon nanotube transistors with ion. Pdf carbon nanotube fieldeffect transistors neophytos. Carbon nanotube fets cntfets the carbon nanotube field effect transistor cntfet is one of the most promising candidates for next generation electronics and sensors. Carbon nanotubes represent advancement in the materials technology with potential for providing switching devices that may be faster and. This paper discusses the device physics of carbon nanotube fieldeffect transistors cntfets. A carbon nanotube field effect transistor cntfet refers to a field effect transistor that utilizes a single carbon nanotube or an array of carbon nanotubes as the channel material instead of bulk silicon in the traditional mosfet structure. An assessment is made of the suitability of the carbon nanotube fieldeffect transistor for applications in nanoelectronics. Inherent linearity in carbon nanotube fieldeffect transistors. Study of carbon nanotube field effect transistors for nems.
Carbon nanotube fieldeffect transistors with integrated. Iv characteristics model for carbon nanotube field effect. Abstract the carbon nanotube field effect transistor cntfet can be considered as one of the promising new transistors because it. Purifying and positioning carbon nanotubes are challenges for the synthesis of electronic devices based on these nanomaterials. Nanotubes are used as field emitters and optical polarizers as well 2. Jan 20, 2017 researchers build carbon nanotube transistors that outperform those made with silicon. The aim of this article is to investigate the electronic transport in field effect transistors based on carbon nanotubes and to discuss three different device architectures with respect to their applicability. Carbon nanotube fieldeffect transistor for dna sensing. The effect of using ebl with devices incorporating cnt has also been investigated. Swcnt random network thin film transistor with a 10 5 of onoff ratio and a 8 cm 2 cs of field effect mobility was demonstrated using waterassisted plasmaenhanced cvd pecvd.
Researchers build carbon nanotube transistors that outperform. As one possibility, the rollup of graphene results in carbon nanotubes fig. Hooges constant for carbon nanotube field effect transistors masa ishigami, j. Ballistic carbon nanotube fieldeffect transistors nature. Ervin arltr4883 july 2009 approved for public release.
Fabrication of carbon nanotube field effect transistors with semiconductors as source and drain contact materials z. Device and circuitlevel performance of carbon nanotube fieldeffect transistor with benchmarking against a nanomosfet. Carbon nanotube fieldeffect transistors request pdf. Nano letters carbon nanotube fieldeffect transistors with. Singlewalled carbon nanotube network field effect transistors were fabricated and studied as humidity sensors. Analysis of near ballistic carbon nanotube fieldeffect transistors. Simulation studies of carbon nanotube fieldeffect transistors nffls are presented using models of increasing rigor and versatility that have been systematically. High performance ntype carbon nanotube field effect transistors. Cntfet device physics is now rather well understood, and sophisticated transistor structures with highperformance operation are now being reported. Highperformance enhancementmode semiconducting carbon nanotube fieldeffect transistors cntfets are obtained by combining ohmic metal. Carbon nanotube transistors for biosensing applications.
Singlewalled carbon nanotube network field effect transistor. Iv characteristics model for carbon nanotube field effect transistors rebiha marki, cherifa azizi and mourad zaabat. Abstractthe performance of carbon nanotubebased transistor is analyzed. The field effect mobility of random networks of swcnt as thinfilm transistor can exceed 100 cm 2 vs. These energy barriers severely limit transistor conductance in the on state, and reduce the current delivery capabilityakey determinant of device performance. Carbon nanotube fieldeffect transistors for highperformance. For largescale fabrication of cntfet devices three conditions need to be satisfied.
Effects of differing carbon nanotube fieldeffect transistor architectures by andrew m. Carbon nanotube transistor a field effect array utilizing singlewall carbon nanotubes as the channel with a simple way for processing dr. Temperature effects on mosfetlike carbon nanotube field. Although various methods were used to synthesize the carbon. Carbon nanotube field effect transistors with improved. Gas sensors based on carbon nanotubes in the field effect transistor configuration have exhibited impressive sensitivities compared to the existing technologies. There are n carbon atoms in each ring and a total of n atoms. High performance ntype carbon nanotube fieldeffect. Request pdf high performance ntype carbon nanotube field effect transistors with chemically doped contacts short channel 80 nm. Novel nanotube based tfet offers flexibility to the emerging transistor design. Basic characterization and effect of high dielectric material international journal of recent trends engineering, vol 2, no. A common feature of the singlewalled carbonnanotube fieldeffect transistors fabricated to date has been the presence of a schottky barrier at the nanotube metal junctions1,2,3. Pdf geometric construction of carbon nanotube junctions. Physical properties of the junction of scandium and carbon nanotubes.
A carbon nanotube fieldeffect transistor cntfet refers to a fieldeffect transistor that utilizes a single carbon nanotube or an array of carbon nanotubes as the. Fabrication of carbon nanotube fieldeffect transistors with. A common feature of the singlewalled carbonnanotube fieldeffect transistors fabricated to date has been the presence of a schottky barrier at the nanotubemetal junctions1,2,3. Williams department of physics, university of maryland, college park, college park md 20742 usa david tobias, y.
Sensing responses were altered by changing the gate voltage. Pdf comparative analysis of performance characteristic of. Carbon nanotube field effect transistors are expected to be beneficial for analog highfrequency applications due to, among others, their inherent linearity and, thus, very low signal distortion. Lowdimensional systems and nanostructures 2011, doi. First demonstrated in 1998, there have been major developments in cntfets since. The metallic swcnt conductivity is almost independent of the gate voltage, while that of the semiconducting swcnts strongly depends on the gate voltage and usually exhibits a ptype channel behaviour of the transistor figure 326. Using schrodingerpoisson formalism, a carbon nanotube field effect transistor cntfet is studied. Metaloxidesemiconductor field effect transistors mosfets 18 a. Camino center for functional nanomaterials, brookhaven national laboratory, upton, ny 11973 proposal title. In recent years, intensive research on singlewalled carbon nanotube swntbased field effect transistors fets19 has.
A successful carbon nanotube field effect transistor cnfet 22 i. Jun 24, 2005 dopingfree fabrication of ntype random network singlewalled carbon nanotube field effect transistor with yttrium contacts. Carbonnanotube, fieldeffect transistors cnfets are among the candidates for emerging radiofrequency applications, and improved linearity has recently been identified as one of the performance. A fieldeffect transistor fet using carbon nanotubes cnts as the conducting channel cntfet has been developed, designed such that the cnt conducting channel 15. Tunneling phenomena in carbon nanotube fieldeffect transistors. Gold nanoparticle decorated carbon nanotube field effect transistors for glucose and gas sensing a dissertation submitted to the faculty of the graduate school of arts and sciences of georgetown university in partial fulfillment of the requirements for the degree of doctor of philosophy in physics by yian liu, b. However, the lack of an understanding of the gas sensing mechanism in these carbon nanotube field effect transistors cntfets has impeded settingup a calibration standard and.
649 344 892 1286 344 1345 29 1140 1496 1206 902 649 309 1158 306 265 84 958 917 338 1336 1225 385 1111 212 152 177 307 534 393 776 1377 1408 718